Journal Publications:
PUBLICATIONS
13. A. Sengupta, T. K. Bhattacharyya, and G. Dutta, "Dual-Gate β-Ga2O3 Nanomembrane Transistors: Device Operation and Analytical Modelling", Journal of Physics D: Applied Physics, (Online: June 2021) DOI: 10.1088/1361-6463/ac0de4
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11. S. Kanaga, G. Dutta, B. Kushwah, N. DasGupta and A. DasGupta, "Low Temperature and High Pressure Oxidized Al2O3 as Gate Dielectric for AlInN/GaN MIS-HEMTs", IEEE Transactions on Device and Materials Reliability, vol. 20, pp. 613 - 621, 2020.
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10. A. Abdulsalam, N. Karumuri and G. Dutta, "Modeling and Analysis of Normally–OFF p-GaN Gate AlGaN/GaN HEMT as an On-Chip Capacitor", IEEE Transactions on Electron Devices, vol. 67, pp. 3536 - 3540, 2020. PDF
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9. S. Sinha, G. Dutta, R. Mannam, N. DasGupta and M.S.R. Rao, "Effect of post deposition annealing on the electrical properties of YSZ thin films deposited by pulsed laser technique," Applied Surface Science, vol. 513, pp. 1454962 (1-8), 2020.
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8. A. Abdulsalam and G. Dutta, "On the Threshold Voltage of Normally-OFF AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) with p-(Al)GaN gate," Semiconductor Science and Technology, vol. 35 (1), pp. 015020 (1-9), 2020. PDF
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7. G. Dutta, N. DasGupta, and A. DasGupta, “Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and its Modeling,” IEEE Transactions on Electron Devices, vol. 64 (9), pp. 3609-3615, 2017. PDF
6. G. Dutta, N. DasGupta, and A. DasGupta, “Low-Temperature ICP-CVD SiNx as Gate Dielectric for GaN-Based MIS-HEMTs,” IEEE Transactions on Electron Devices, vol. 63 (12), pp. 4693-4701, 2016. PDF
5. N. Karumuri, G. Dutta, N. DasGupta, and A. DasGupta, “A Compact Model of Drain Current for GaN HEMTs based on 2DEG Charge Linearization,” IEEE Transactions on Electron Devices, vol. 63 (11), pp. 4226-4232, 2016. PDF
4. G. Dutta, N. DasGupta, and A. DasGupta, “Effect of Sputtered-Alâ‚‚O₃ Layer Thickness on the Threshold Voltage of III-Nitride MIS-HEMTs,” IEEE Transactions on Electron Devices, vol. 63 (4), pp. 1450-1458, 2016. PDF
3. M. Shukla, G. Dutta, R. Mannam, and N. DasGupta, “Electrical properties of reactive-ion-sputtered Al2O3 on 4H-SiC,” Thin Solid Films (Elsevier), vol. 607, pp. 1-6, 2016.
2. G. Dutta, S. Turuvekere, N. Karumuri, N. DasGupta, and A. DasGupta, “Positive Shift in Threshold Voltage for Reactive-Ion-Sputtered Al2O3/ AlInN/GaN MISHEMT,” IEEE Electron Device Letters, vol. 35 (11), pp. 1085-1087, 2014. PDF
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1. G. Dutta and S. Basu, “Analysis of Electrical Characteristics of GaInP/GaAs HBTs Including Recombination Effect,” Journal of Semiconductors (IOP Science), vol. 33 (5), pp. 054002 (1-6), 2012.
Book Chapter:
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"AlGaN/GaN HEMT Fabrication and Challenges" pp. 133-171, in the Book "Handbook for III-V High Electron Mobility Transistor Technologies" CRC Press-Taylor & Francis Group, 2019
International Conferences​:
13. S. Das, K. Dey, A. Singha and G. Dutta, "Effect of Field-Plates on Trap induced Current Collapse in AlGaN/GaN High Electron Mobility Transistors," International Workshop on Physics of Semiconductor Devices (IWPSD), Kolkata, India, 2019.
12. A. Abdulsalam and G. Dutta, "Effect of Device Parameters on the Threshold Voltage of Normally-OFF AlGaN-channel HEMTs enabled by p-AlGaN Gate," International Workshop on Physics of Semiconductor Devices (IWPSD), Kolkata, India, 2019.
11. K. De and G. Dutta, "Investigation of Trap Induced Gate Lag Phenomenon in AlGaN/GaN High Electron Mobility Transistors", IEEE ICEE, Bangalore, India, 2018.
10. S. Kanaga, G. Dutta, B. Kushwah, N. DasGupta, A. DasGupta, "Low Temperature - High Pressure Oxidized Al2O3 as Gate Dielectric for AlInN/GaN MIS-HEMTs", International Workshop on Nitride Semiconductors (IWN 2018), Kanazawa, Japan, 2018.
9. B. Kushwah, S. Kanaga, G. Dutta, A. DasGupta and N. DasGupta, "Study of interface traps for GaN-based MIS-HEMTs with high pressure oxidized aluminium as gate dielectric", IEEE ICEE, Bangalore, India, 2018.
8. S. Kanaga, B. Kushwah, G. Dutta, N. DasGupta, and A. DasGupta, "AlInN/GaN MIS-HEMTs with High Pressure Oxidized Aluminium as Gate Dielectric", IEEE CONECCT, Bangalore, India, 2018.
7. A. Khandelwal, G. Dutta, A. DasGupta and N. DasGupta, "Trapping phenomenon in AlInN/GaN HEMTs: a study based on drain current transient spectroscopy", International Workshop on Physics of Semiconductor Devices (IWPSD), New Delhi, India, 2017.
6. B. Kushwah, G. Dutta, S. Kanaga, N. DasGupta and A. DasGupta, "High Pressure Oxidized Aluminium as Gate Dielectric for GaN-based MIS-HEMTs", International Workshop on Physics of Semiconductor Devices (IWPSD), New Delhi, India, 2017.
5. G. Dutta, N. DasGupta, and A. DasGupta, “Improved Device Performance of GaN-based MIS-HEMTs Using Low-Temperature Deposited ICP-CVD Si3N4 as Gate Dielectric and Passivation Layer”, International Conference on Electronic Materials (ICEM), Singapore, 2016.
4. A. Tomar, G. Dutta, N. DasGupta, and A. DasGupta, “Comparison of Shallow Interface Traps in AlGaN/GaN MIS-Devices with Three Different Gate Dielectrics”, IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, 2016.
3. G. Dutta, N. DasGupta, and A. DasGupta, “AlGaN/GaN MIS-HEMT Using ICP-CVD Deposited Silicon Nitride as Gate Dielectric”, International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, 2015.
2. G. Dutta, N. DasGupta, and A. DasGupta, “Effect of Al2O3 Layer Thickness on the Threshold Voltage of GaN-based MIS-HEMTs”, International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 2015.
1. N. Karumuri, G. Dutta, N. DasGupta, and A. DasGupta, “A Physics Based Drain Current Compact Model for GaN Based HEMTs”, International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 2015.